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APTGF90TA60PG
Triple phase leg NPT IGBT Power Module
VBUS1 VBUS2 VBUS3
VCES = 600V IC = 90A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge * RoHS compliant Max ratings 600 110 90 315 20 416 200A @ 600V Unit V
APTGF90TA60PG - Rev 1 July, 2006
G1
G3
G5
E1
U
E3
V
E5
W
G2
G4
G6
E2 0/VBUS1
E4 0/VBUS2
E6 0/VBUS3
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4 0/VBUS 3
G5 E5 E6 G6
U
V
W
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
A V W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF90TA60PG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 90A Tj = 125C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 2.5 5 150 Unit A V V nA
2.0 2.2 3
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 90A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 90A RG = 5 VGE = 15V Tj = 125C VBus = 400V IC = 90A Tj = 125C RG = 5
Min
Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3
Max
Unit pF
nC
ns
ns
mJ 3.5
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/s
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
60 1.6 1.9 1.4 130 170 220 920 1.8
V
APTGF90TA60PG - Rev 1 July, 2006
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTGF90TA60PG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.3 0.9 150 125 100 5 250 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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APTGF90TA60PG - Rev 1 July, 2006
APTGF90TA60PG
Typical Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300
350
Ic, Collector Current (A)
Ic, Collector Current (A)
300 250 200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ=-55C
250 200
250s Pulse Test < 0.5% Duty cycle
T J=-55C
T J=25C
T J=25C
150 100
TJ=125C
TJ=125C
50 0
1 2 3 VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
4
300 VGE, Gate to Emitter Voltage (V)
Gate Charge 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) 300 350
VCE=480V IC = 90A TJ = 25C VCE=120V VCE=300V
Ic, Collector Current (A)
250 200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ=-55C
TJ=25C TJ=125C TJ=-55C
1
23 4 56 7 8 9 VGE, Gate to Emitter Voltage (V)
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 10 12 14 VGE, Gate to Emitter Voltage (V) 8 16
Ic=90A Ic=45A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=180A
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
Ic=45A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=180A Ic=90A
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
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APTGF90TA60PG - Rev 1 July, 2006
APTGF90TA60PG
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35
V GE = 15V
Turn-Off Delay Time vs Collector Current 250
VGE=15V, TJ=125C
30 25 20 15 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80
VCE = 400V RG = 5 Tj = 25C VCE = 400V RG = 5
200
150 100
VCE = 400V R G = 5
VGE=15V, TJ=25C
50 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5
80
tr, Rise Time (ns)
tf, Fall Time (ns)
60
VGE=15V, T J=125C
60
TJ = 125C
40
40
20
20
T J = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
8
Eon, Turn-On Energy Loss (mJ)
6 5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 5 TJ = 125C
6 4 2 0 0
VCE = 400V RG = 5
TJ=125C, VGE=15V
T J=25C, VGE=15V
TJ = 25C
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
VCE = 400V VGE = 15V TJ= 125C
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ)
16
Switching Energy Losses (mJ)
10
VCE = 400V
Eon, 180A Eoff, 180A
12 8
8 6 4 2 0 0
V GE = 15V RG = 5
Eon, 180A
Eoff, 90A Eon, 90A Eoff, 45A
Eoff, 180A
4
Eon, 45A
Eoff, 90A Eoff, 45A Eon, 45A
0 0 10 20 30 40 50
Gate Resistance (Ohms)
25 50 75 100 TJ, Junction Temperature (C)
125
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APTGF90TA60PG - Rev 1 July, 2006
Eon, 90A
APTGF90TA60PG
Capacitance vs Collector to Emitter Voltage 10000 IC, Collector Current (A)
Cies
Reverse Bias Safe Operating Area 250 200 150 100 50 0
C, Capacitance (pF)
1000
Coes Cres
100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0
200 400 600 800 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0.1 0.05 0 0.00001
Fmax, Operating Frequency (kHz)
200 160 120 80 40 0
Operating Frequency vs Collector Current
V CE = 400V D = 50% R G = 5 TJ = 125C TC = 75C
ZVS
ZCS
Hard switching
20
40 60 80 100 IC , Collector Current (A)
120
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF90TA60PG - Rev 1 July, 2006

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